Magnetic Random Access Memory

MRAM is considered as the ideal memory of electronic equipments , which is a new magnetic random access memory and has lots of advanced features that traditional memories do not have .

MRAM是一种具有众多优良特性的新型磁性随机存储器，它被认为是电子设备中的理想存储器。

This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors , read head for high density magnetic recording and magnetic random access memory .

介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。

This paper introduces the giant ( GMR ) and tunneling ( TMR ) magnetoresistive effect . The recent application and development of the magnetic random access memory ( MRAM ) for computer are discussed also .

介绍了巨磁电阻（GMR）及隧道磁电阻（TMR）效应，讨论了计算机磁随机存储器（MRAM）的最新应用开发。

The present application of the GMR effect is mainly on the magnetic sensor , the random access memory and high density read-write head .

目前，GMR效应主要用于磁传感器、随机存储器和高密度读写磁头等方面。

These results illuminated that , in micron order magnetic film systems such as magnetic random access memory , the shape and the tilt of crystal easy axis are important for determining the switch field of the film .

这些结果说明在诸如磁性随机存储器等基于微细磁性薄膜的工作中，薄膜形状及其磁晶易磁化轴的角度不容忽略。

The application devices of Magnetic electronics giant magnetoresistance and tunnel magnetic resistance of Magnetic electronics are spin valve , magnetic random access memory ( MRAM ), spin transistors and so on .

磁电子学中巨磁电阻和隧道磁电阻的应用的器件有自旋阀，磁随机访问存储器（MRAM）和自旋晶体管等。